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2010

2009

2008

2007

2006

  • Z.Q. Li, Alfred K. M. Lam, and Z. Simon Li, "Analysis of a Surface-normal Coupled-Quantum-Well Modulator at 1.55 um", Proceedings of SPIE, "Physics and Simulation of Optoelectronic Devices XIV".
  • Yen-Kuang Kuo, Jun-Rong Chen, Jin-Kuo Ho, Cheng-Zu Wu, Bao-Jen P ong, and Chii-Chang Chen, "Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs", submitted to Photonics West 2006.
  • Yen-Kuang Kuo, Sheng-Horng Yen, and Ming-Wei Yao, "Optimization study on active layers and optical performance for 1.3-um AlGaInAs and InGaAsN semiconductor lasers", submitted to Photonics West 2006.
  • Shu-Hsuan Chang, Yung-Cheng Chang, Cheng-Hong Yang, Jun-Rong Chen, and Yen-Kuang Kuo, "Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes", submitted to Photonics West 2006.
  • Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, and Hao-Chung Kuo, "Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes", submitted to Photonics West 2006.

2005

  • Simon Li, Z.Q. Li, O. Shmatov, C. S. Xia and W. Lu, "3-D simulations on realistic GaN-based light-emitting diodes", Proceedings of MRS 05 Fall, "GaN, AlN, InN, and related materials"
  • Yi-An Chang, Jun-Rong Chen, Hao-Chung Kuo, Yen-Kuang Kuo, and Shing-Chung Wang, Accepted 8 September 2005, "Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers", to be published in IEEE Journal of Lightwave Technology. (SCI, EI)
  • Yi-An Chang, Sheng-Horng Yen, De-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, and Shing-Chung Wang, 2005, "Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diode", submitted to IEEE Journal of Quantum Electronics. (revised) (SCI, EI)
  • Shang-Wei Hsieh and Yen-Kuang Kuo, Accepted 9 August 2005, "A numerical study on characteristic temperature of short-cavity 1.3-um AlGaInAs/InP MQW lasers", to be published in Applied Physics A: Materials Science & Processing. (SCI, EI)
  • Yen-Kuang Kuo, Shang-Wei Hsieh, and Hsiu-Fen Chen, 2005, "Numerical study on optimization of active regions for 1.3-um AlGaInAs and InGaAsN material systems", to be published in Japanese Journal of Applied Physics. (accepted with optional revisions) (SCI, EI)
  • Yi-An Chang, Chuan-Yu Luo, Hao-Chung Kuo, Yen-Kuang Kuo, Chia-Feng Lin, and Shing-Chung Wang, 15 November 2005, "Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer", to be published in Japanese Journal of Applied Physics, Vol. 44, No. 11 on 15 November 2005. (SCI, EI)
  • Man-Fang Huang, Meng-Lun Tsai, Jen-Yuan Shin, Yu-Lung Sun, Ray-Min Yang, and Yen-Kuang Kuo, Published online 24 May 2005, "Optimization of active layer structures to minimize leakage current for AlGaInP laser diode", Applied Physics A: Materials Science & Processing (Publisher: Springer-Verlag GmbH; ISSN: 0947-8396 (Paper) 1432-0630 (Online); DOI: 10.1007/s00339-005-3258-5; Issue: Online First). (SCI, EI)
  • Yi-An Chang, Hao-Chung Kuo, Chun-Yi Lu, Yen-Kuang Kuo, and Shing-Chung Wang, 27 April 2005, "Improving high temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers", Semiconductor Science and Technology, Vol. 20, pp. 601-605. (SCI, EI)
  • Man-Fang Huang, Meng-Lun Tsai, and Yen-Kuang Kuo, January 2005, "Improvement of characteristic temperature for AlGaInP laser diodes", Proceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 127-134. (EI) (invited paper)
  • Sheng-Horng Yen, Bo-Ting Liou, Mei-Ling Chen, and Yen-Kuang Kuo, January 2005, "Thermal and piezoelectric effects on optical properties of violet-blue InGaN lasers", Proceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 156-163. (EI)
  • Shang-Wei Hsieh, Hsiu-Fen Chen, and Yen-Kuang Kuo, January 2005, "Simulation of 1.3-mm AlGaInAs/InP strained MQW lasers", Proceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 318-326. (EI)
  • Yen-Kuang Kuo, Shang-Wei Hsieh, Hsiu-Fen Chen, Mei-Ling Chen, and Bo-Ting Liou, 2005, "Numerical study on 1.3-um semiconductor lasers with variant active region materials", to be submitted to Optics Communications. (SCI, EI)
  • "Device Physics of an Optoelectronic Integrated Wavelength Converter," (invited), J. Piprek, V. Lal, J. Hutchinson, A. Tauke Pedretti, M. Dummer, and L. Coldren, SPIE Photonics West conference on Optoelectronic Integrated Circuits IX, San Jose, CA, 2005.
  • "Temperature Dependence of the Relaxation Resonance Frequency of Long-Wavelength Vertical-Cavity Lasers," Bjorlin, E.S.; Geske, J.; Mehta, M.; Piprek, J.; Bowers, J.E.; IEEE Photonics Technology Letters, Volume 17, Issue 5, May 2005, Page(s):944 - 946.
  • "Analysis of InGaN/GaN VCSELs," J.Piprek, R. Farrell, S. DenBaars, S. Nakamura, in: Proc. IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005.
  • "Device Physics of an Optoelectronic Integrated Wavelength Converter," J. Piprek, V. Lal, J. Hutchinson, A. Tauke Pedretti, M. Dummer, and L. Coldren, in: Optoelectronic Integrated Circuits IX, SPIE Proc. 5729, 2005.
  • "GaN-based Light Emitting Diodes," J. Piprek and S. Li, Chapter 10 in: Optoelectronic Devices: Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York , 2005.
  • "Monolithic Wavelength Converter: Many-Body Effects and Saturation Analysis," J. Piprek, S. Li, P. Mensz, and J. Hader, Chapter 14 in: Optoelectronic Devices - Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2005.
  • "Broadband Rate-Equation Model including Many-Body Gain for WDM Traveling-Wave SOAs," V. Lal, W. Donat, A. Tauke Pedretti, L. Coldren, D. Blumenthal, and J. Piprek; in: Proc. IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005.
  • "Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers," Sheng-Horng Yen, Bo-Ting Liou, Mei-Ling Chen, Yen-Kuang Kuo, Semiconductor Lasers and Applications II, edited by Jian-quan Yao,Yung Jui Chen, Seok Lee, Proceedings of SPIE Vol. 5628 (SPIE,Bellingham, WA, 2005), p. 156.
  • "Ultrafast Gain Dynamics in Asymmetrical Multiple Quantum-Well Semiconductor Optical Amplifiers," Vladimir V. Lysak, Hitoshi Kawaguchi, Igor A. Sukhoivanov, Takeo Katayama, and Aleksey V. Shulika, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 6, JUNE 2005, p.797.
  • "Design and Fabrication of Low Beam Divergence and High Kink-Free Power Lasers," Bocang Qiu, Stewart D. McDougall, Xuefeng Liu, Gianluca Bacchin, and John H. Marsh IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 9, SEPTEMBER 2005, p. 1124.
  • "Comparison between a graded and step-index optical cavity in InGaN MQW laser diodes," Juan A Martyn1 and M Sanchez, Semicond. Sci. Technol. 20 (2005) pp. 290-295.
  • "Simulation of 1.3-¦m AlGaInAs/InP strained MQW lasers," Shang-Wei Hsieha, Hsiu-Fen Chena, Ming-Wei Yaob, Yen-Kuang Kuo, Semiconductor Lasers and Applications II, edited by Jian-quan Yao, Yung Jui Chen, Seok Lee, Proceedings of SPIE Vol. 5628 (SPIE, Bellingham, WA, 2005), p. 318.

2004

  • Yen-Kuang Kuo and Yi-An Chang, May 2004, "Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance", IEEE Journal of Quantum Electronics, Vol. 40, No. 5, pp. 437-444. (SCI, EI)
  • Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen, and Cheng-Yang Lin, 15 February 2004, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics", Optics Communications, Vol. 231, Issues 1-6, pp. 395-402. (SCI, EI)
  • "Improvement of Kink-Free Output Power by Using Highly Resistive Regions in Both Sides of the Ridge Stripe for 980-nm Laser Diodes," Masahiro Yuda, Takuo Hirono, Member, IEEE, Atsuo Kozen, and Chikara Amano, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 40, NO. 9, SEPTEMBER 2004, p. 1203.
  • "Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes," Koji Katayama and Takao Nakamura,JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 7 1 APRIL 2004, p. 3576.
  • "Design and Optimization of High-Performance 1.3 ¦m VCSELs," Joachim Piprek, Manish Mehta, and Vijay Jayaraman, in: Physics and Simulation of Optoelectronic Devices XII, SPIE Proc. 5349, 2004.
  • "Internal Efficiency Analysis of 280 nm Light Emitting Diodes," J. Piprek, C. Moe, S. Keller, S. Nakamura, and S. P. DenBaars, SPIE Optics East, Conf. on Physics and Applications of Optoelectronic Devices, Philadelphia, October 2004.
  • "Saturation Analysis of a Monolithic Wavelength Converter," J. Piprek, John Hutchinson, Jeffrey Henness, Milan Masanovic, and Larry A. Coldren, SPIE Optics East, Conf. on Physics and Applications of Optoelectronic Devices, Philadelphia, October 2004.
  • "Simulation of GaN-based Light Emitting Devices" (invited), J. Piprek, IEEE/EDS Int. Conf. on Simulation of Semiconductor Processes and Devices, Munich, Germany, September 2004.
  • "Many-Body Effects on InP-based Optoelectronic Wavelength Converters for WDM Applications" (postdeadline), J. Piprek, John Hutchinson, Jeff Henness, Larry Coldren, and J?rg Hader; 4th IEEE/LEOS Int. Conf. on Numerical Simulation of Optoelectronic Devices, Santa Barbara, August 2004.
  • "Carrier Loss Analysis for Ultraviolet Light Emitting Diodes", J. Piprek, Thomas Katona, Stacia Keller, Steve DenBaars, and Shuji Nakamura; 4th IEEE/LEOS Int. Conf. on Numerical Simulation of Optoelectronic Devices, Santa Barbara, August 2004.
  • Zhi-qiang Li, Vivian Zhou, Simon Li, T. Sudersena Rao, W.Y. Jiang, S.P. Watkins, "Chemical kinetics and design of gas inlets for III-V growth by MOVPE in a quartz showerhead reactor ," J. Crystal Growth, vol. 272, 2004,pp. 47-51.
  • "Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance " Yen-Kuang Kuo and Yi-An Chang, IEEE J. Quant. Electron., Vol. 40, No. 5, May 2004, pp. 437-444.
  • "Design optimization of InGaAsP-InGaAlAs 1.55 ¦m strain-compensated MQW lasers for direct modulation applications." M Nadeem Akram, Christofer Silfvenius, Olle Kjebon and Richard Schatz, Semicond. Sci. Technol. 19 No 5(May 2004) 615-625.
  • "GaN-based Light Emitting Diode " J. Piprek and S. Li, Chapter 10 in: Optoelectronic Devices - Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2004.
  • "Monolithic Wavelength Converter: Many-Body Effects and Saturation Analysis" J. Piprek, S. Li, P. Mensz, and J. Hader, Chapter 14 in: Optoelectronic Devices - Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2004.
  • "Quantum-mechanical modeling and characterization of direction tunneling in thin-oxide MOSFET," Yiming Li, Simon Z. Li, Jam-Wen Lee and Peter Mensz, Proc. of Symposium on Nano Device Technology 2004, Hsinchu, Taiwan, 12-13 May 2004, pp. 485-488.
  • "Effects of bnad-offset ratio on analysis of violet-blue InGaN laser characteristics," Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen and Cheng-Yang Lin, Optics Communications, vol. 231, pp. 395-402, 2004.
  • J. Piprek, T. Katona, S.P. DenBaars, and S. Li, "3D Simulation and analysis of AlGaN/GaN ultraviolet light emitting diodes," Light-Emitting Diodes: Research, Manufacturing and Applications VIII, SPIE Proc. 5366-59 (2004).
  • J. Piprek, N. Trenado, J. M. Hutchinson, J. A. Henness, and L. A. Coldren, "Three-dimensional simulation of an integrated wavelength converter," in Physics and Simulation of Optoelectronic Devices XII, Photonics West 2004, SPIE Proc.5349-26 (2004)
  • "Realistic Simulation of Quantum Well Lasers" (invited), J. Piprek, NanoTech, Boston, MA, March 2004
  • "Design optimization of InGaAlAs/GaAs single and double quantum well lasers emitting at 808 nm," Mariusz Zbroszczyk and Maciej Bugajski, Proc. SPIE Int. Soc. Opt. Eng. 5349, 446 (2004).

2003

  • "POTENTIALLY MODULATED MULTI-QUANTUM WELL SOLAR CELLS WITH IMPROVED DARK CURRENT CHARACTERISTICS," Naoyuki Shiotsuka, Tom Takeda, and Yoshitaka Okada Proc. of 3rd World Conference on Photovoltaic Energy Conversion May 11-18.2003 Osaka, Japan, paper SILN-D-03.
  • "The effects of quantum-well number on gain crosstalk in semiconductor optical amplifiers," Kasunic, K.J.; Tastavridis, K.; Clark, C.N.; Lestrade, M.; Champagne, A.; Maciejko, R.; Quantum Electronics, IEEE Journal of, Volume:39, Issue:7, July 2003, Pages:897 - 902.
  • "Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes," Darja,J.; Narata, S.; Nong Chen; Nakano, Y.; Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings of the IEEE/LEOS 3rd International Conference on ,14-16 Oct. 2003, Pages:25 - 26.
  • "Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells," Nadir, M.; Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings of the IEEE/LEOS 3rd, International Conference on , 14-16 Oct. 2003, Pages:53 - 54.
  • "Physical modeling of a novel barrier-enhanced quantum-well photodetector device for optical receivers," Gregory B. Tait, Bahram Nabet, Microwave and Optical Technology Letters,Volume 40, Issue 3 , Pages 224 - 227.
  • "Current Transport Modeling in Quantum-Barrier-Enhanced Heterodimensional Contacts. " Taft, Gregory B.; Nabet, Bahram. IEEE Transactions on Electron Devices, Dec2003, Vol. 50 Issue 12, p2573, 6p.
  • Shmatov, O.; Li, Z.S.,"Truncated-inverted-pyramid light emitting diode geometry optimisation using ray tracing technique," Optoelectronics, IEE Proceedings-, Volume:150, Issue:3 ,17 June 2003, Pages:273 - 277.
  • "Predictive Simulation of Quantum Well Lasers: How close are we ?" (invited), J. Piprek, OSA Laser Science Conference, Tucson, AZ, October 2003.
  • "Advanced Analysis of Vertical Cavity Lasers" (invited), J. Piprek, Int. Conf. Mixed Design MIXDES, Lodz, Poland, June 2003
  • "Balanced Optimization of 1.31 um Tunnel-Junction VCSELs," Joachim Piprek, Vijay Jayaraman, Manish Mehta, and John E. Bowers, IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Tokyo, 2003.
  • "Physics of Waveguide Photodetectors with Integrated Amplification," J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, in: Physics and Simulation of Optoelectronic Devices XI, SPIE Proc. 4986-28, January 2003.
  • "High-Temperature Characteristics and Tunability of Long-Wavelength Vertical-Cavity Semiconductor Optical Amplifiers," Toshio Kimura, Staffan Bj?rlin, Joachim Piprek, John E. bowers, IEEE Photonics Technology Letters, vol. 15, no. 11, pp. 1501-1503, November 2003.
  • "Lateral-cavity design for long-wavelength vertical-cavity lasers," J. Pipek, A. Bregy, Y.-J. Chiu, V. Jayaranman, J.E. Bowers, Proceedings of Nano Tech, Feb. 2003, San Francisco, CA.
  • "Integrated cavity surface emitting lasers," B. Liu, J. Piprek, J.E. Bowers, SPIE Proceedings 5248-22, (ITCOM¡¯03), pp. 148-155, Sept. 2003, Orlando, FL.
  • "Optimization of GaAs amplification photodetectors for 700% quantum efficiency," J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, IEEE J. Selected Topics in Quantum Electronics, Vol. 9, No. 3, May/June 2003, pp. 776-782.
  • "InP-based waveguide photodetector with integrated photon multiplication," D. Pasquariello, J. Piprek, D. Lasaosa, J. E. Bowers, SPIE Proceedings 5248-34, Semiconductor Optoelectronic Devices for Lightwave Communication, ITCOM, Sept. 2003.
  • "Novel waveguide photodetectors on InP with integrated light amplification," J. Piprek, D. Pasquariello, D. Lasaosa, and J. E. Bowers, Session: Compoud Semiconductors, ECS Proceedings 2003-04.
  • Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen, and Cheng-Yang Lin, 2004, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics", Optics Communications (accepted 2003/12/11). (SCI)
  • Jih-Yuan Chang and Yen-Kuang Kuo, 2003, "Simulation of blue InGaN quantum-well lasers", Journal of Applied Physics, Vol. 93, No. 9, pp. 4992-4998. (SCI)

2002

  • "High-power 980-nm pump lasers with flared waveguide design," Balsamo,S.; Ghislotti, G.; Trezzi, F.; Bravetti, P.; Coli, G.; Morasca, S.; Lightwave Technology, Journal of , Volume: 20 , Issue: 8 , Aug. 2002, Pages:1512 - 1516.
  • "Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy," O. Douheret, S. Anand, C. Angulo Barrios, and S. Lourdudoss, APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 6, 5 AUGUST 2002, p. 960.
  • "Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm," J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, and M. Asif Khan, APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 26 23 DECEMBER 2002,p. 4910.
  • "High-speed resonant cavity light-emitting diodes at 650 nm," Dumitrescu,M.M.; Saarinen, M.J.; Guina, M.D.; Pessa, M.V.; Selected Topics in Quantum Electronics, IEEE Journal of , Volume: 8 ,Issue: 2 , March-April2002, Pages:219 - 230.
  • Yuni Chang, Yen-Kuang Kuo, and Man-Fang Huang, 2002, "Characteristics of 850-nm InGaAs/AlGaAs vertical-cavity surface-emitting lasers", Proceedings of SPIE, Vol. 4913 (Semiconductor Lasers and Applications), pp. 31-40.(EI)
  • Jih-Yuan Chang and Yen-Kuang Kuo, 2002, "Electronic current overflow and inhomogeneous hole distribution of the InGaN quantum well structures", Proceedings of SPIE, Vol. 4913 (Semiconductor Lasers and Applications), pp. 115-125.(EI)
  • "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration," M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, and S. P. DenBaars, Applied Physics Letters, vol. 81, no. 22, 4275-77, November 2002.
  • "Analysis and Optimization of High-Power GaN Lasers," J. Piprek and Shuji Nakamura, IEEE Int. Semiconductor Laser Conf., Garmisch-Patenkirchen, Germany, October 2002.
  • Joachim Piprek, Yi-Jen Chiu and J.E. Bowers, "Analysis of Multi-Quantum Well Electroabsorption Modulators," Physics and Simulation of Optoelectronic Devices X, Photonics West, January 2002, San Jose, CA.
  • Joachim Piprek, Y.-J. Chiu, S. Zhang, J.E. Bowers, C.Prott, and H. Hillmer, " High-Efficiency Multi-Quantum-Well Electroabsorption Modulators," Proceedings of the ECS Symposium on Integrated Optoelectronics, May 2002, Philadelphia, PA.
  • M. Hansen, J.Piprek, P.M. Pattison, J.S. Speck, S. Nakamura, and S.P. DenBaars " "Higher Efficiency InGaN laser diodes with an improved quantum well capping configuration," Applied Physics Letters, vol. 81, no. 22, 4275-77, November 2002.
  • J. Piprek, J.K.White, A.J. SpringThorpe, " Physics of Output Power Limitations in Long-Wavelength Laser Diodes," SPIE Proceedings 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, ITcom02, August 2002, Boston, MA.
  • J. Piprek, S. Nakamura, " Physics of GaN-based High-Power Lasers," IEEE Lester Eastman Conference on High Performance Devices, August 2002, Newark, NJ.
  • J. Piprek, J. K. White, and A. SpringThorpe, "What Limits the Maximum Output Power of Long-Wavelength AlGaInAs/InP Laser Diodes?," IEEE Journal of Quantum Electronics, vol. 38, 1253 (2002).
  • J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron, vol. 149, 145 (2002).
  • "Influence of Valence-Band Barriers in VLWIR HgCdTe P-on-n Heterojunctions on Photodiode Parameters," J. Wenus, J. Rutkowski, Physica Status Solidi (b),Volume 229, Issue 2 , Pages 1093 - 1096
  • Barrios, Lourdudoss, and Martinsson, "Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers
    with a semi-insulating GaInP:Fe burying layer,"     J. Appl. Phys., Vol. 92, No. 5, p.2506, 2002 

2001

  • "Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes," Chia-Ming Lee, Chang-Cheng Chuo, Jing-Fu Dai, Xian-Fa Zheng, and Jen-Inn Chyi, JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 11, 1 JUNE 2001, p. 6554.
  • "Computer modeling of dual-band HgCdTe photovoltaic detectors," K. Jozwikowski and A. Rogalski, JOURNAL OF APPLIED PHYSICS VOLUME 90, NUMBER 3 1 AUGUST 2001, p. 1286
  • "Numerical modeling of fluctuation phenomena in semiconductor devices," Krzysztof Jozwikowski, JOURNAL OF APPLIED PHYSICS, VOLUME 90, NUMBER 3, 1 AUGUST 2001, p. 1318
  • "Optimization of the barrier height in 1.3-mu m InGaAsP multiple-quantum-well active regions for high-temperature operation," Sebastian Mogg and Joachim Piprek, Proc. SPIE Int. Soc. Opt. Eng.4283, 227 (2001)
  • "Experimental and theoretical analysis of the carrier distribution in asymmetric multiple quantum-well InGaAsP lasers," Hamp, M.J.; Cassidy, D.T.;Quantum Electronics, IEEE Journal of , Volume: 37 , Issue: 1 , Jan. 2001, Pages:92 - 99
  • "Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes," Wenus, J.; Rutkowski, J.; Rogalski, A.; Electron Devices, IEEE Transactions on , Volume: 48 , Issue: 7 , July 2001, Pages:1326 - 1332
  • "Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy," Microwave and Optical Technology Letters, Volume 29, Issue 2, Date: 20 April 2001, Pages: 75-77, By T. Piwonski, P. Sajewicz, J. M. Kubica, M. Zbroszczyk, K. Reginski, B. Mroziewicz, M. Bugajski
  • Joachim Piprek, Staffan Bjorlin and John Bowers, "Modeling And Optimization Of Vertical-Cavity Semiconductor Laser Amplifiers," Physics and Simulation of Optoelectronic Devices IX, Photonics West, SPIE Proc. 4283-15, 2001.
  • "Simulation and analysis of nitride laser diodes" (invited), J. Piprek, Laser Workshop, ETH Zurich, Switzerland, October 2001.
  • "Advanced analysis of high-temperature failure mechanisms in telecom lasers," J. Piprek, ITCOM, Semiconductor Lasers for Lightwave Communication Systems, Denver, CO, August 2001.
  • Joachim Piprek, Staffan Bjorlin and John Bowers, "Design and Analysis of Vertical-Cavity Semiconductor Optical Amplifiers," IEEE Journal of Quantum Electronics, Volume 37, Number 1, Pages 127-134, January 2001.
  • Yi-Jen Chiu, Sheng Zhang, Volkan Kaman, Joachim Piprek and John Bowers, "High-Speed Traveling-Wave Electroabsorption Modulators," Symposium on Radio Frequency Photonic Devices and Systems II, 46th SPIE Annual Meeting, San Diego, August 2001.
  • M. Nawaz, K. Permthammasin,"A design analysis of a GaInP/GaInAs/GaAs-based 980 nm Al-free pump laser using self-consistent numerical simulation," Semiconductor Science and Technology, vol. 16, pp. 877-884, 2001.
  • "A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation," Nawaz, M.; Permthamassin, K.; Zaring, C.; Willander, M.; Semiconductor Device Research Symposium, 2001 International;5-7 Dec. 2001, Pages:289 - 292
  • "Impact of the LWIR photodiodes geometry on their basic parameters," Jakub Wenus, Jaroslaw Rutkowski, Krzysztof Adamiec, Leszek Kubiak, and Pawel Madejczyk, Proc. SPIE Int. Soc. Opt. Eng. 4413, 363 (2001)
  • "Modeling and numerical simulation of the optical intensity distribution in double-heterostructure semiconductor lasers," Ladislav Kuna and Frantisek Uherek, Proc. SPIE Int. Soc. Opt. Eng.4356, 283 (2001)

2000

  • "IMPROVED DARK CURRENT CHARACTERISTICS OF GaAdnGaAs MULTI-QUANTUM WELL SOLAR CELLS FABRICATED BY ATOMIC H-ASSISTED MOLECULAR BEAM EPITAXY," Okada, Y.; Seki, S.; Hagiwara, Y.; Kawabe, M, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference, 2000, p. 1277.
  • Yen-Kuang Kuo, Kuo-Kai Horng, Ya-Lien Huang, Jih-Yuan Chang, Yuni Chang, and Hsu-Ching Huang, 2000, "Temperature dependent optical properties of the InGaN semiconductor materials: experimental and numerical studies", Proceedings of SPIE, Vol. 4078 (Optoelectronic Materials and Devices), pp. 579-586. (EI)
  • Man-Fang Huang, Pin-Hui Liu, J. S. Liu, Yen-Kuang Kuo, Ya-Lien Huang, Kuo-Kai Horng, Jih-Yuan Chang, Yuni Chang, and Hsu-Ching Huang, "Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes", Proceedings of SPIE, Vol. 4078 (Optoelectronic Materials and Devices), pp. 595-602. (EI)
  • Yen-Kuang Kuo, Hsu-Ching Huang, Jih-Yuan Chang, Yuni Chang, Kuo-Kai Horng, Ya-Lien Huang, Wen-Wei Lin, and Man-Fan Huang, 2000, "A study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials", in the 13th Annual Lasers and Electro Optics Society Meeting (IEEE/LEOS 2000, Puerto Rico), paper ThL 4 (Conference Proceedings pp. 790-791).
  • Yen-Kuang Kuo, Kuo-Kai Horng, Hsu-Ching Huang, Ya-Lien Huang, Jih-Yuan Chang, Yuni Chang, Wen-Wei Lin, Yi-An Chang, and Chih-Kang Chang, 2000, "Numerical study on III-N and III-P semiconductor materials with LASTIP, PICS3D, and CASTEP", in the 2nd International Photonics Conference (IPC2000, National Chiao Tung University, Hsinchu, Taiwan), paper W-S1-A003, Proc. IPC 2000, pp. 17-19.
  • Jih-Yuan Chang and Yen-Kuang Kuo, 2000, "Temperature-dependent current overflow of InGaN quantum well structure - a numerical study", in the 2nd International Photonics Conference, paper W-S1-A004, Proc. IPC 2000, pp. 20-22.
  • Hsu-Ching Huang, Yuni Chang, and Yen-Kuang Kuo, 2000, "A numerical study on 570-nm AlGaInP quantum well structure with tensile-strained barrier", in the 2nd International Photonics Conference, paper Th-T1-B002, Proc. IPC 2000, pp. 340-342.
  • Kuo-Kai Horng, Hsu-Ching Huang, and Yen-Kuang Kuo, 2000, "Numerical study on an ultraviolet GaN/Al0.2Ga0.8N vertical-cavity surface-emitting laser", in the 2nd International Photonics Conference, paper TH-S1-P004, Proc. IPC 2000, pp. 497-499.
  • "Self-Consistent Simulation and Analysis of InGaN/GaN Lasers," J. Piprek, Shuji Nakamura, LEOS Annual Meeting, Rio Grande, November 2000.
  • "Simulation and Optimization of 420nm InGaN/GaN Laser Diodes," J. Piprek, K. Sink, M. Hansen, J. Bowers, and S. DenBaars, SPIE Photonics West Symp. on Physics and Simulation of Optoelectronic Devices, San Jose, CA, January 2000.
  • M.J. Hamp, D.T. Cassidy, B.J. Robinson, Q.C. Zhao, D.A. Thompson, "Effect of Barrier Thickness on the Carrier Distribution in Asymmectric MQW InGaAsP Lasers," IEEE Photonic Technology Letters, vol. 12, No. 2. February 2000.
  • J. Piprek , P. Abraham, and J.E. Bowers,"Self-Consistent Analysis of High-Temperature Effects on Strained-Layer Multiquantum-Well InGaAsP-InP Lasers," IEEE Journal of Quantum. Electronics. Vol.36. No3. March 2000.

-1999

  • "Hole distribution in InGaAsP 1.3-um multiple-quantum-well laser structures with different hole confinement energies," Silfvenius, C.; Landgren, G.; Marcinkevicius, S.; Quantum Electronics, IEEE Journal of , Volume: 35, Issue: 4 ; April 1999, Pages:603-607
  • "High-performance 1.3-um InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers," Iwai, N.; Mukaihara, T.; Yamanaka, N.; Kumada, K.; Shimizu, H.; Kasukawa, A.; Selected Topics in Quantum Electronics, IEEE Journal of ,Volume: 5 ,Issue: 3 ; May-June 1999, Pages:694 - 700
  • "Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers," Piprek, J.; Abraham, P.; Bowers, J.E.;Selected Topics in Quantum Electronics, IEEE Journal of ,Volume: 5 ,Issue: 3 ; May-June 1999, Pages:643 - 647
  • M. Dumitrescu, M. Toivonen, P. Savolainen, S. Orsila, M. Pessa. "High-power Edge Emitting Red Laser Diode Optimisation using Optical Simulation," Optical and Quantum Electronics 31: 1009 1030. 1999.
  • J. Piprek, P. Abraham, and J.E. Bowers," Efficiency analysis of quantum well lasers using PICS3D," Proc. Integrated Photonics Research Conf., Santa Barbara, July 1999.
  • P. Abraham, J. Piprek, S.P. DenBaars, and J.E. Bowers, "Study of temperature effects on loss mechanisms in 1.55 um laser diodes with In(0.81)Ga(0.19)P electron stopper layer," Semicond. Sci. Technology. vol. 14, (1999) pp. 419-424.
  • J. Piprek, P. Abraham, and J.E. Bowers, "Self-consistent analysis of high-temperature effects on InGaAsP/InP lasers," Proc. IEEE International Symposium on Compound Semiconductors, Berlin 1999.
  • J. Piprek, K. Takiguchi, A. Black, P. Abraham, A. Keating,V. Kaman, S. Zhang, and J.E. Bowers, "Analog Modulation of 1.55 um vertical-cavity lasers," SPIE Proc. vol. 3627. "Vertical-Cavity Surface-Emitting Lasers III," leds. Kent D. Choquette and Chun Lei (1999).
  • P. Abraham, J. Piprek, S.P. DenBaars, and J.E. Bowers, "Improvement of internal quantum efficiency in 1.55 um laser diodes with InGaP electron stopper layer," Jpn. J. Appl. Phys. vol. 38 (1999) pp. 1239-1242.
  • M.J. Hamp, D.T. Cassidy, B.J. Robinson, Q.C. Zhao, D.A. Thompson, and M. Davies, "Effect of Barrier Height on the Uneven Carrier Distribution in Asymmetric MQW InGaAsP Lasers," IEEE Photonic Technology Letters, vol. 10, No. 10. pp. 1380-1382. October 1998.
  • J. Piprek, P. Abraham, S.P. DenBaars, and J.E. Bowers, "Effects of an InGaP electron barrier layer on 1.55 um laser diode performance," Proc. 10th International Conf. on Indium Phoshide and Related Materials, Tsukuba, Japan, May 1998.
  • J. Piprek, P. Abraham, and J.E. Bowers, "Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers," Appl. Phys. Lett., vol. 74, No. 4, pp. 489-491, Jan. 1999.
  • [J. Piprek, P. Abraham, and J.E. Bowers, "Effects of quantum well recombination losses on the internal differential efficiency of multi quantum well lasers," Proc. 16th IEEE International Semiconductor Laser Conf.,Paper TuE37, Nara, Japan 1998.
  • Y. Yoshida, H. Watanabe, K. Shibata, A. Takemoto, and H. Higuchi, "Analysis of characteristic temperature for InGaAsP DH lasers with p-n-p-n blocking layers using two-dimensional device simulator," IEEE J. Quantum Electronics, vol. 34, No. 7, July 1998.
  • Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi, "Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes," Internet Journal of Nitride Semiconductor Research, vol. 3, article 2. 1998.
  • "Carrier transport effects in 1.3pm MQW InGaAsP laser design," Christofer Silfvenius and Gunnar Landgren, 10th Intern. Conf. on Indium Phosphide and Related Materials,11-15 May 1998 Tsukuba, Japan, paper TUP-45
  • "1.4-um InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability," Xiang Zhu; Cassidy, D.T.; Hamp, M.J.; Thompson, D.A.; Robinson, B.J.; Zhao, Q.C.; Davies, M.; Photonics Technology Letters, IEEE, Volume: 9, Issue:9, Sept. 1997, Pages:1202 - 1204.
  • A. Lindell, M. Pessa and A. Salokatve, F. Bernardini and R. M. Nieminen, "Band offset at the GaInP/GaAs heterojunction," J.Appl. Phys., vol. 82, No. 7, 1 Oct. 1997, pp. 3374-3380.
  • P. M. Mensz, "Prospects for truly blue ZnSe/Zn{1-u}Mg{u}S{v}Se{1-v}/Zn{1-x}Mg{x}S{y}Se{1-y} semiconductor diode laser," Appl. Phys. Lett., vol. 65, pp. 2627-2629, 1994.
  • P. M. Mensz, J. Crystal Growth, vol. 138, p. 697, 1994.
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